DIODES Incorporated Single, Pre-Biased Bipolar Transistors DRDPB26W-7

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363

TRANS PREBIAS PNP 50V SOT363 Product overview: DRDPB26W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRDPB26W-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1115761-DRDPB26W-7
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Frequency - Transition: 200 MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Alternative Parts (Cross-Reference): DRDPB26W7;
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 220 Ohms
Resistor - Emitter Base (R2): 4.7 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Diodes Incorporated
Other Names: DRDPB26WDITR,DRDPB26WDIDKR,DRDPB26WDICT,DRDPB26W7
Base Product Number: DRDPB26
Product Status: Obsolete