DIODES Incorporated Single, Pre-Biased Bipolar Transistors DRDPB16W-7

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363
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Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363
Request a Quote
Datasheet
Datasheet Summary
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The 1325639-DRDPB16W-7 is a pre-biased bipolar junction transistor (BJT) from Win Source Electronics, designed for surface mount applications in a SOT-363 package. This device integrates one PNP transistor and one switching diode, making it suitable for relay driver applications. It features a maximum power dissipation of 200 mW and can handle collector-emitter voltages up to 50 V with a collector current rating of 600 mA. The transistor exhibits a DC current gain (hFE) of at least 56 at 50 mA and a transition frequency of 200 MHz, which supports high-speed switching applications. The product is fully RoHS compliant and is manufactured in facilities certified to IATF 16949, ensuring quality for automotive applications. The device is also halogen and antimony-free, aligning with environmental standards.

Datasheet Summary
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The 1325639-DRDPB16W-7 is a pre-biased bipolar junction transistor (BJT) from Win Source Electronics, designed for surface mount applications in a SOT-363 package. This device integrates one PNP transistor and one switching diode, making it suitable for relay driver applications. It features a maximum power dissipation of 200 mW and can handle collector-emitter voltages up to 50 V with a collector current rating of 600 mA. The transistor exhibits a DC current gain (hFE) of at least 56 at 50 mA and a transition frequency of 200 MHz, which supports high-speed switching applications. The product is fully RoHS compliant and is manufactured in facilities certified to IATF 16949, ensuring quality for automotive applications. The device is also halogen and antimony-free, aligning with environmental standards.

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Single, Pre-Biased Bipolar Transistors - DRDPB16WDITR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DRDPB16WDITR-ND
Single, Pre-Biased Bipolar Transistors DRDPB16WDITR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1325639-DRDPB16W-7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1325639-DRDPB16W-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1325639-DRDPB16W-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1325639-DRDPB16W-7 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 600 mA Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Frequency - Transition: 200 MHz Supplier Device Package: SOT-363 Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: DRDPB16WDIDKR,DRDPB1 6WDICT,DRDPB16WDITR, DRDPB16W7 Base Product Number: DRDPB16 Product Status: Obsolete RoHS Status: ROHS3 Compliant

Manufacturer: Diodes Incorporated
Win Source Part Number: 1325639-DRDPB16W-7
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Frequency - Transition: 200 MHz
Supplier Device Package: SOT-363
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: DRDPB16WDIDKR,DRDPB16WDICT,DRDPB16WDITR,DRDPB16W7
Base Product Number: DRDPB16
Product Status: Obsolete
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DRDPB16W-7
Bipolar Transistors - Pre-Biased DRDPB16W-7
Bipolar Transistors - Pre-Biased PNP Trans R1-R2 Switch-Relay Drvr

Bipolar Transistors - Pre-Biased PNP Trans R1-R2 Switch-Relay Drvr

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRDPB16W-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRDPB16W-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRDPB16W-7
TRANS PREBIAS PNP 50V SOT363

TRANS PREBIAS PNP 50V SOT363

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DRDPB16WDITR-ND 1325639-DRDPB16W-7 DRDPB16W-7 DRDPB16W-7
Product Name Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; 6-TSSOP, SC-88, SOT-363
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
IC(max) 600 milliamps 600 milliamps
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