DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DRDP006W-7 DRDP006W-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014597-DRDP006W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014597-DRDP006W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DRDP006W-7 - 014597-DRDP006W-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DRDP006W-7
014597-DRDP006W-7
TRANSISTORS - Transistors (BJT) - Single - DRDP006W-7 014597-DRDP006W-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014597-DRDP006W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 014597-DRDP006W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP + Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 400mV @ 15mA, 150mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
60V Bipolar Transistor
292-DRDP006W-7
60V Bipolar Transistor 292-DRDP006W-7
TRANS PREBIAS PNP 60V SOT363 Product overview: DRDP006W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRDP006W-7 can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 60V SOT363 Product overview: DRDP006W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRDP006W-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 31-DRDP006W-7TR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
31-DRDP006W-7TR-ND
Single, Pre-Biased Bipolar Transistors 31-DRDP006W-7TR-ND
Pre-Biased Bipolar Transistor (BJT)

Pre-Biased Bipolar Transistor (BJT)

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 31-DRDP006W-7CT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
31-DRDP006W-7CT-ND
Single, Pre-Biased Bipolar Transistors 31-DRDP006W-7CT-ND
TRANS PREBIAS PNP 60V SOT363

TRANS PREBIAS PNP 60V SOT363

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 31-DRDP006W-7DKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
31-DRDP006W-7DKR-ND
Single, Pre-Biased Bipolar Transistors 31-DRDP006W-7DKR-ND
TRANS PREBIAS PNP 60V SOT363

TRANS PREBIAS PNP 60V SOT363

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DRDP006W-7
Bipolar Transistors - BJT DRDP006W-7
Bipolar Transistors - BJT PNP Trans/Switch Diode-Relay Drvr

Bipolar Transistors - BJT PNP Trans/Switch Diode-Relay Drvr

Buy Now Datasheet
Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R - 233-DRDP006W-7 - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R
233-DRDP006W-7
Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R 233-DRDP006W-7
Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R

Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRDP006W-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRDP006W-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRDP006W-7
TRANS PREBIAS PNP 60V SOT363

TRANS PREBIAS PNP 60V SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 014597-DRDP006W-7 292-DRDP006W-7 31-DRDP006W-7TR-ND DRDP006W-7 233-DRDP006W-7 DRDP006W-7
Product Name TRANSISTORS - Transistors (BJT) - Single - DRDP006W-7 60V Bipolar Transistor Single, Pre-Biased Bipolar Transistors Bipolar Transistors - BJT Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP + Diode (Isolated) PNP PNP PNP; PNP
Package Type SOT3; SOT-363 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 600 milliamps 600 milliamps 600 milliamps
VCEO 60 volts 60 volts 60 volts
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