TRANS PREBIAS NPN/DIODE SOT363
TRANS PREBIAS NPN 50V SOT363 Product overview: DRDNB16W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRDNB16W-7 can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 600mA 200MHz 200mW Surface Mount SOT-363
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 600mA 200MHz 200mW Surface Mount SOT-363
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 600mA 200MHz 200mW Surface Mount SOT-363
Manufacturer: Diodes Incorporated
Win Source Part Number: 014595-DRDNB16W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased + Diode
Family Name: DRDNB16W
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-363
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 50mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): DRDNB16W;
Introduction Date: August 01, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
56@50mA,5V 1 NPN - Pre Biased 200mW 600mA 50V 500nA SC-70-6(SOT-363) Digital Transistors ROHS
Bipolar Transistors - Pre-Biased NPN Trans R1-R2 Switch-Relay Drvr
TRANS PREBIAS NPN 50V SOT363
RF TRANSISTOR, 60V, 0.6A, SOT-363 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | DRDNB16W-7 | 292-DRDNB16W-7 | DRDNB16WDITR-ND | 014595-DRDNB16W-7 | DRDNB16W-7 | DRDNB16W-7 | DRDNB16W-7 | 28AK8919 |
| Product Name | Single, Pre-Biased Bipolar Transistors | 50V Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRDNB16W-7 | Triode/MOS Tube/Transistor >> Digital Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor, 60V, 0.6A, Sot-363 Rohs Compliant Diodes Inc. |
| Polarity | NPN - Pre-Biased + Diode; NPN | NPN | NPN - Pre-Biased + Diode; NPN | NPN | ||||
| Package Type | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | 6-TSSOP, SC-88, SOT-363 | SOT3; SOT-363 | TO-3; SOT3 | |||
| IC(max) | 600 milliamps | 600000 milliamps | 600 milliamps | 600 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | 50 volts | ||||
| Operating Frequency | 200 MHz | 200 MHz |
