DIODES Incorporated Single Bipolar Transistors DRDN010W-7

Bipolar (BJT) Transistor NPN + Diode (Isolated) 18V 1A 100MHz 200mW Surface Mount SOT-363

Manufacturer: Diodes Incorporated
Win Source Part Number: 014594-DRDN010W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN + Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 18V
Max Vce (sat): 500mV @ 30mA, 300mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 150 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

TRANS NPN 18V 1A SOT363 Product overview: DRDN010W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DRDN010W-7 can be used for catalog matching and distributor lookup.