DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DRDN005W-7 DRDN005W-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014593-DRDN005W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014593-DRDN005W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DRDN005W-7 - 014593-DRDN005W-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DRDN005W-7
014593-DRDN005W-7
TRANSISTORS - Transistors (BJT) - Single - DRDN005W-7 014593-DRDN005W-7
Manufacturer: Diodes Incorporated Win Source Part Number: 014593-DRDN005W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 014593-DRDN005W-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN + Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
80V 0.5A Bipolar Transistor
276-DRDN005W-7
80V 0.5A Bipolar Transistor 276-DRDN005W-7
TRANS NPN 80V 0.5A SOT363 Product overview: DRDN005W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DRDN005W-7 can be used for catalog matching and distributor lookup.

TRANS NPN 80V 0.5A SOT363 Product overview: DRDN005W-7 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DRDN005W-7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - DRDN005WDI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DRDN005WDI-ND
Single Bipolar Transistors DRDN005WDI-ND
Bipolar (BJT) Transistor NPN + Diode (Isolated) 80V 500mA 100MHz 200mW Surface Mount SOT-363

Bipolar (BJT) Transistor NPN + Diode (Isolated) 80V 500mA 100MHz 200mW Surface Mount SOT-363

Buy Now Datasheet
Single Bipolar Transistors - DRDN005W-7 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DRDN005W-7
Single Bipolar Transistors DRDN005W-7
TRANS NPN 80V 0.5A SOT363

TRANS NPN 80V 0.5A SOT363

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DRDN005W-7
Bipolar Transistors - BJT DRDN005W-7
Bipolar Transistors - BJT NPN Trans/Switch Diode-Relay Drvr

Bipolar Transistors - BJT NPN Trans/Switch Diode-Relay Drvr

Buy Now Datasheet
TRANS NPN 80V 0.5A SOT363 - 233-DRDN005W-7 - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 80V 0.5A SOT363
233-DRDN005W-7
TRANS NPN 80V 0.5A SOT363 233-DRDN005W-7
TRANS NPN 80V 0.5A SOT363

TRANS NPN 80V 0.5A SOT363

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRDN005W-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRDN005W-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRDN005W-7
TRANS NPN 80V 0.5A SOT363

TRANS NPN 80V 0.5A SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 014593-DRDN005W-7 276-DRDN005W-7 DRDN005WDI-ND DRDN005W-7 DRDN005W-7 233-DRDN005W-7 DRDN005W-7
Product Name TRANSISTORS - Transistors (BJT) - Single - DRDN005W-7 80V 0.5A Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT TRANS NPN 80V 0.5A SOT363 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN + Diode (Isolated) NPN NPN + Diode (Isolated); NPN NPN; NPN
Package Type SOT3; SOT-363 Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 500 milliamps 500 milliamps 500 milliamps
VCEO 80 volts 80 volts 80 volts
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