DIODES Incorporated Single Bipolar Transistors DP0150BLP4-7B

Description
TRANS PNP 50V 0.1A 3DFN
Request a Quote Datasheet
Description
TRANS PNP 50V 0.1A 3DFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - DP0150BLP4-7B - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DP0150BLP4-7B
Single Bipolar Transistors DP0150BLP4-7B
TRANS PNP 50V 0.1A 3DFN

TRANS PNP 50V 0.1A 3DFN

Supplier's Site Datasheet
Single Bipolar Transistors - DP0150BLP4-7BDI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DP0150BLP4-7BDI-ND
Single Bipolar Transistors DP0150BLP4-7BDI-ND
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3

Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - DP0150BLP4-7B - 000780-DP0150BLP4-7B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DP0150BLP4-7B
000780-DP0150BLP4-7B
TRANSISTORS - Transistors (BJT) - Single - DP0150BLP4-7B 000780-DP0150BLP4-7B
Manufacturer: Diodes Incorporated Win Source Part Number: 000780-DP0150BLP4-7B Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 000780-DP0150BLP4-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DP0150BLP4-7B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DP0150BLP4-7B
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DP0150BLP4-7B
TRANS PNP 50V 0.1A 3DFN

TRANS PNP 50V 0.1A 3DFN

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DP0150BLP4-7B
Bipolar Transistors - BJT DP0150BLP4-7B
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K

Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DP0150BLP4-7B DP0150BLP4-7BDI-ND 000780-DP0150BLP4-7B DP0150BLP4-7B DP0150BLP4-7B
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - DP0150BLP4-7B Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP; PNP PNP PNP; PNP
Package Type 3-XFDFN 3-XFDFN SOT3; X2-DFN1006-3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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