DIODES Incorporated Single Bipolar Transistors DP0150ALP4-7B

Description
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - DP0150ALP4-7BDI-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DP0150ALP4-7BDI-ND
Single Bipolar Transistors DP0150ALP4-7BDI-ND
Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3

Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - DP0150ALP4-7B - 000779-DP0150ALP4-7B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DP0150ALP4-7B
000779-DP0150ALP4-7B
TRANSISTORS - Transistors (BJT) - Single - DP0150ALP4-7B 000779-DP0150ALP4-7B
Manufacturer: Diodes Incorporated Win Source Part Number: 000779-DP0150ALP4-7B Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 2mA, 6V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 000779-DP0150ALP4-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 2mA, 6V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DP0150ALP4-7B
Bipolar Transistors - BJT DP0150ALP4-7B
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K

Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DP0150ALP4-7B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DP0150ALP4-7B
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DP0150ALP4-7B
TRANS PNP 50V 0.1A 3DFN

TRANS PNP 50V 0.1A 3DFN

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DP0150ALP4-7BDI-ND 000779-DP0150ALP4-7B DP0150ALP4-7B DP0150ALP4-7B
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - DP0150ALP4-7B Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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