DIODES Incorporated Single Bipolar Transistors DNLS412E-13

Bipolar (BJT) Transistor

Manufacturer: Diodes Incorporated
Win Source Part Number: 014519-DNLS412E-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 400mV @ 50mA, 4A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 400 @ 3A, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

TRANS NPN 12V 4A SOT-223 Product overview: DNLS412E-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DNLS412E-13 can be used for catalog matching and distributor lookup.