DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DNLS350E-13 DNLS350E-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014518-DNLS350E-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: DNLS350E Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 290mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): PBSS4350Z,135; PBSS4350Z/DG,135; PBSS4350Z; PBSS4350ZT; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 014518-DNLS350E-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: DNLS350E Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 290mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): PBSS4350Z,135; PBSS4350Z/DG,135; PBSS4350Z; PBSS4350ZT; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Datasheet
Datasheet Summary
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The DNLS350E-13 is a single NPN transistor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V and can handle continuous collector currents up to 3A. The transistor exhibits a low equivalent on-resistance of 62m,Ѷ at 2A, making it suitable for efficient operation in various circuits. This device is housed in a SOT-223 package and is compliant with AEC-Q101 standards, ensuring high reliability for automotive applications. It is also RoHS compliant and free from halogens and antimony, aligning with environmental regulations. The operating temperature range is from -55¬8C to +150¬8C, providing versatility in different thermal conditions. With a typical gain (hFE) of 100 at 2A and 2V, the DNLS350E-13 is a reliable choice for engineers looking for a robust transistor for their projects.

Datasheet Summary
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The DNLS350E-13 is a single NPN transistor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V and can handle continuous collector currents up to 3A. The transistor exhibits a low equivalent on-resistance of 62m,Ѷ at 2A, making it suitable for efficient operation in various circuits. This device is housed in a SOT-223 package and is compliant with AEC-Q101 standards, ensuring high reliability for automotive applications. It is also RoHS compliant and free from halogens and antimony, aligning with environmental regulations. The operating temperature range is from -55¬8C to +150¬8C, providing versatility in different thermal conditions. With a typical gain (hFE) of 100 at 2A and 2V, the DNLS350E-13 is a reliable choice for engineers looking for a robust transistor for their projects.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DNLS350E-13 - 014518-DNLS350E-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DNLS350E-13
014518-DNLS350E-13
TRANSISTORS - Transistors (BJT) - Single - DNLS350E-13 014518-DNLS350E-13
Manufacturer: Diodes Incorporated Win Source Part Number: 014518-DNLS350E-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: DNLS350E Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 290mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): PBSS4350Z,135; PBSS4350Z/DG,135; PBSS4350Z; PBSS4350ZT; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 014518-DNLS350E-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Family Name: DNLS350E
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 290mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 2A, 2V
Maximum Power Dissipation: 1W
Alternative Parts (Cross-Reference): PBSS4350Z,135; PBSS4350Z/DG,135; PBSS4350Z; PBSS4350ZT;
Introduction Date: February 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - DNLS350E-13 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DNLS350E-13
Single Bipolar Transistors DNLS350E-13
TRANS NPN 50V 3A SOT223-3

TRANS NPN 50V 3A SOT223-3

Supplier's Site Datasheet
Single Bipolar Transistors - DNLS350EDITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DNLS350EDITR-ND
Single Bipolar Transistors DNLS350EDITR-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Buy Now Datasheet
Single Bipolar Transistors - DNLS350EDIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DNLS350EDIDKR-ND
Single Bipolar Transistors DNLS350EDIDKR-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Buy Now Datasheet
Single Bipolar Transistors - DNLS350EDICT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
DNLS350EDICT-ND
Single Bipolar Transistors DNLS350EDICT-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223-3

Buy Now Datasheet
Singapore
50V 3A Bipolar Transistor
276-DNLS350E-13
50V 3A Bipolar Transistor 276-DNLS350E-13
TRANS NPN 50V 3A SOT223-3 Product overview: DNLS350E-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DNLS350E-13 can be used for catalog matching and distributor lookup.

TRANS NPN 50V 3A SOT223-3 Product overview: DNLS350E-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DNLS350E-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DNLS350E-13
Bipolar Transistors - BJT DNLS350E-13
Bipolar Transistors - BJT NPN 1W

Bipolar Transistors - BJT NPN 1W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DNLS350E-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DNLS350E-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DNLS350E-13
TRANS NPN 50V 3A SOT223-3

TRANS NPN 50V 3A SOT223-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 014518-DNLS350E-13 DNLS350E-13 DNLS350EDITR-ND 276-DNLS350E-13 DNLS350E-13 DNLS350E-13
Product Name TRANSISTORS - Transistors (BJT) - Single - DNLS350E-13 Single Bipolar Transistors Single Bipolar Transistors 50V 3A Bipolar Transistor Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN NPN
Package Type SOT3; SOT-223 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA Tape & Reel (TR)
Packing Method Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
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