DIODES Incorporated Bipolar Transistor Arrays DN0150BDJ-7

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 60MHz 300mW Surface Mount SOT-963
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 60MHz 300mW Surface Mount SOT-963
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - DN0150BDJ-7-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
DN0150BDJ-7-ND
Bipolar Transistor Arrays DN0150BDJ-7-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 60MHz 300mW Surface Mount SOT-963

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 60MHz 300mW Surface Mount SOT-963

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TRANSISTORS - Transistors (BJT) - Arrays - DN0150BDJ-7 - 102898-DN0150BDJ-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - DN0150BDJ-7
102898-DN0150BDJ-7
TRANSISTORS - Transistors (BJT) - Arrays - DN0150BDJ-7 102898-DN0150BDJ-7
Manufacturer: Diodes Incorporated Win Source Part Number: 102898-DN0150BDJ-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 60MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-963 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 102898-DN0150BDJ-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-963
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - DN0150BDJ-7 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
DN0150BDJ-7
Bipolar Transistor Arrays DN0150BDJ-7
TRANS 2NPN 50V 0.1A SOT963

TRANS 2NPN 50V 0.1A SOT963

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DN0150BDJ-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DN0150BDJ-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DN0150BDJ-7
TRANS 2NPN 50V 0.1A SOT963

TRANS 2NPN 50V 0.1A SOT963

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DN0150BDJ-7
Bipolar Transistors - BJT DN0150BDJ-7
Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL NPN/NPN

Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL NPN/NPN

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DN0150BDJ-7-ND 102898-DN0150BDJ-7 DN0150BDJ-7 DN0150BDJ-7 DN0150BDJ-7
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - DN0150BDJ-7 Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; 2 NPN (Dual) 2 NPN (Dual); NPN
Package Type SOT-963 SOT3; SOT-963 SOT-963
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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