DIODES Incorporated Single Bipolar Transistors DN0150ALP4-7B

Description
TRANS NPN 50V 0.1A 3DFN
  • Single Bipolar Transistors - DN0150ALP4-7B - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors (BJT) - Single - DN0150ALP4-7B - 1033897-DN0150ALP4-7B - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DN0150ALP4-7B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
TRANS NPN 50V 0.1A 3DFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - DN0150ALP4-7B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DN0150ALP4-7B
Single Bipolar Transistors DN0150ALP4-7B
TRANS NPN 50V 0.1A 3DFN

TRANS NPN 50V 0.1A 3DFN

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - DN0150ALP4-7B - 1033897-DN0150ALP4-7B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DN0150ALP4-7B
1033897-DN0150ALP4-7B
TRANSISTORS - Transistors (BJT) - Single - DN0150ALP4-7B 1033897-DN0150ALP4-7B
Manufacturer: Diodes Incorporated Win Source Part Number: 1033897-DN0150ALP4-7 B Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 60MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: X2-DFN1006-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 2mA, 6V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033897-DN0150ALP4-7B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: X2-DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 2mA, 6V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DN0150ALP4-7B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DN0150ALP4-7B
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DN0150ALP4-7B
TRANS NPN 50V 0.1A 3DFN

TRANS NPN 50V 0.1A 3DFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
DN0150ALP4-7B
Bipolar Transistors - BJT DN0150ALP4-7B
Bipolar Transistors - BJT 50V Small Sig Trans 60V VCBO 50V VCEO

Bipolar Transistors - BJT 50V Small Sig Trans 60V VCBO 50V VCEO

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DN0150ALP4-7B 1033897-DN0150ALP4-7B DN0150ALP4-7B DN0150ALP4-7B
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - DN0150ALP4-7B Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN; NPN NPN; NPN
Package Type 3-XFDFN SOT3; X2-DFN1006-3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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