DIODES Incorporated Single FETs, MOSFETs DMWSH170H850HM4

The DMWSH170H850HM4 is a 1700V N-channel silicon carbide power MOSFET in a TO247-4 package, designed for high-efficiency power management applications such as SMPS, UPS, EV/HEV DC-DC converters, and on-board chargers. It has a maximum drain-source voltage of 1700V, a static drain-source on-resistance of 0.85Ω at VGS = 20V and ID = 2A, and a continuous drain current of 6.58A at TC = +25°C. The device is housed in a molded plastic package with a "Green" molding compound, rated UL 94 V-0, and features a matte tin annealed copper leadframe. Thermal resistance from junction to case is 2.04°C/W, and the operating and storage junction temperature range is -55°C to +175°C. The part is RoHS compliant, halogen and antimony free, and qualified for automotive applications per AEC-Q200. It weighs approximately 6.6 grams.