DIODES Incorporated Single FETs, MOSFETs DMWSH120H90SM4

The DMWSH120H90SM4 is a 1200V N-channel silicon carbide power MOSFET designed for high-efficiency power-management applications such as EV charging systems and automotive motor drivers. It is packaged in a TO247-4 case with approximate dimensions of 23.60 x 16.30 x 5.21 mm and weighs 6.6 grams. The device features a maximum on-resistance of 97.5 mΩ at 15V gate-source voltage and 20A drain current, a continuous drain current rating of 40A at 25°C case temperature, and a gate-source voltage range of +15/-4 V. Its junction operating temperature ranges from -55°C to +175°C. The package uses a molded plastic 'Green' molding compound with UL 94 V-0 flammability rating, and the terminals are matte tin annealed over copper leadframe, meeting MIL-STD-202 solderability standards. The part is RoHS compliant and halogen- and antimony-free. Thermal resistance from junction to case is 0.64°C/W.