DIODES Incorporated Single FETs, MOSFETs DMWSH120H90SM3

The DMWSH120H90SM3 is a 1200V N-channel silicon carbide power MOSFET in a TO247 package, designed for high-efficiency power applications such as EV DC-DC converters and charging systems. It has a maximum continuous drain current of 41A at 25°C and a typical on-resistance of 75mΩ at VGS = 15V and ID = 20A. The device features a gate-source voltage rating of +15V/-4V (static), a thermal resistance junction-to-case of 0.61°C/W, and operates from -55°C to +175°C. It is RoHS compliant, halogen- and antimony-free, and meets UL 94 V-0 flammability standards. The package is molded plastic with a matte tin finish on a copper leadframe and weighs approximately 5.6 grams.