DIODES Incorporated Single FETs, MOSFETs DMWSH120H80SM3

The DMWSH120H80SM3 is a 1200V N-channel silicon carbide power MOSFET in a TO247 package, designed for high-efficiency power management applications such as EV charging systems, solar inverters, and UPS. It has a maximum drain-source on-resistance of 80.5mΩ at VGS = 18V and ID = 20A, with a continuous drain current of 31.4A at TC = 100°C. The device supports a gate-source voltage range of -4V to +18V and operates from -55°C to +175°C junction temperature. It features a thermal resistance junction-to-case of 0.63°C/W, is RoHS compliant, and meets UL 94 V-0 flammability standards. The package is molded plastic with matte tin annealed terminals and weighs approximately 6.6 grams.