DIODES Incorporated Single FETs, MOSFETs DMWSH120H43SM4

The DMWSH120H43SM4 is a 1200V N-channel silicon carbide power MOSFET designed for high-efficiency power-management applications such as EV high-power DC-DC converters, EV charging systems, and automotive motor drivers. It is packaged in a TO247-4 case with a molded plastic housing compliant with UL 94 V-0 flammability rating, weighs approximately 6.6 grams, and features a matte tin annealed copper leadframe. The device has a maximum drain-source on-resistance of 43 mΩ at VGS = 15V and ID = 40A, a continuous drain current rating of 72.7A at TC = 25°C, and is qualified to AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200 standards. It is RoHS compliant, halogen-free, and antimony-free, with an operating junction temperature range from -55°C to +175°C.