DIODES Incorporated Single FETs, MOSFETs DMWSH120H23SM4Q

The DMWSH120H23SM4Q is a 1200V N-channel silicon carbide power MOSFET in a TO247-4 package, designed for high-efficiency power management applications such as EV/HEV DC-DC converters, on-board chargers, and industrial SMPS. It has a maximum continuous drain current of 97A at TC=25°C and a static drain-source on-resistance of 23mΩ at VGS=18V and ID=50A. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. The package is molded plastic with UL 94V-0 flammability rating, weighs approximately 6.6 grams, and feature a matte tin annealed terminal finish. Thermal resistance junction-to-case is 0.46°C/W, and the operating temperature range is -55°C to +175°C.