DIODES Incorporated Connectors,Interconnects DMTH8008SPSQ-13

Description
Manufacturer: AMIS Category: Connectors,Interconn ects Packaging: Bulk Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder
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Description
Manufacturer: AMIS Category: Connectors,Interconn ects Packaging: Bulk Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder
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Datasheet
Datasheet Summary
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The DMTH8008SPSQ is an N-channel MOSFET with a maximum drain-source voltage of 80V and a continuous drain current rating of 92A at a case temperature of 25¬8C. It features a low on-resistance of 7.8mOc at a gate-source voltage of 10V, which helps minimize on-state losses. This device is rated for operation up to 175¬8C, making it suitable for high ambient temperature environments. It is AEC-Q101 qualified, indicating its reliability for automotive applications, and is manufactured in IATF 16949 certified facilities. The MOSFET is RoHS compliant and features a lead-free finish, ensuring it meets environmental standards. The package type is PowerDI5060-8, and it has a total power dissipation of 1.6W. The device also supports 100% unclamped inductive switching (UIS) testing in production, enhancing its robustness for end applications. With a moisture sensitivity level of 1, it is designed for reliable performance in various conditions.

Datasheet Summary
Powered by GS/AI

The DMTH8008SPSQ is an N-channel MOSFET with a maximum drain-source voltage of 80V and a continuous drain current rating of 92A at a case temperature of 25¬8C. It features a low on-resistance of 7.8mOc at a gate-source voltage of 10V, which helps minimize on-state losses. This device is rated for operation up to 175¬8C, making it suitable for high ambient temperature environments. It is AEC-Q101 qualified, indicating its reliability for automotive applications, and is manufactured in IATF 16949 certified facilities. The MOSFET is RoHS compliant and features a lead-free finish, ensuring it meets environmental standards. The package type is PowerDI5060-8, and it has a total power dissipation of 1.6W. The device also supports 100% unclamped inductive switching (UIS) testing in production, enhancing its robustness for end applications. With a moisture sensitivity level of 1, it is designed for reliable performance in various conditions.

Suppliers

Company
Product
Description
Supplier Links
Connectors,Interconnects -  - Win Source Electronics
Laguna Hills, CA, United States
Connectors,Interconnects
Connectors,Interconnects
Manufacturer: AMIS Category: Connectors,Interconn ects Packaging: Bulk Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V Power Dissipation (Max): 100W (Tc) Operating Temperature: -40°C ~ 85°C Mounting Type: Requires Holder

Manufacturer: AMIS
Category: Connectors,Interconnects
Packaging: Bulk
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 77µA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Requires Holder

Buy Now Datasheet
Singapore
61V 100V MOSFET Transistor
278-DMTH8008SPSQ-13
61V 100V MOSFET Transistor 278-DMTH8008SPSQ-13
MOSFET BVDSS: 61V~100V POWERDI50 Product overview: DMTH8008SPSQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH8008SPSQ-13 can be used for catalog matching and distributor lookup.

MOSFET BVDSS: 61V~100V POWERDI50 Product overview: DMTH8008SPSQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH8008SPSQ-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 31-DMTH8008SPSQ-13TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-DMTH8008SPSQ-13TR-ND
Single FETs, MOSFETs 31-DMTH8008SPSQ-13TR-ND
MOSFET BVDSS: 61V~100V POWERDI50

MOSFET BVDSS: 61V~100V POWERDI50

Buy Now Datasheet
Mosfet, N-Ch, 80V, 92A, 175Deg C, 1.6W Rohs Compliant Diodes Inc. - 68AH9577 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 92A, 175Deg C, 1.6W Rohs Compliant Diodes Inc.
68AH9577
Mosfet, N-Ch, 80V, 92A, 175Deg C, 1.6W Rohs Compliant Diodes Inc. 68AH9577
MOSFET, N-CH, 80V, 92A, 175DEG C, 1.6W ROHS COMPLIANT: YES

MOSFET, N-CH, 80V, 92A, 175DEG C, 1.6W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - DMTH8008SPSQ-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMTH8008SPSQ-13
Single FETs, MOSFETs DMTH8008SPSQ-13
MOSFET BVDSS: 61V~100V POWERDI50

MOSFET BVDSS: 61V~100V POWERDI50

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMTH8008SPSQ-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMTH8008SPSQ-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMTH8008SPSQ-13
MOSFET BVDSS: 61V~100V POWERDI50

MOSFET BVDSS: 61V~100V POWERDI50

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-DMTH8008SPSQ-13 31-DMTH8008SPSQ-13TR-ND 68AH9577 DMTH8008SPSQ-13 DMTH8008SPSQ-13
Product Name Connectors,Interconnects 61V 100V MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 80V, 92A, 175Deg C, 1.6W Rohs Compliant Diodes Inc. Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 100000 milliwatts 1.6 milliwatts 1600 milliwatts
Package Type SOT3 Tape & Reel (TR) 8-PowerTDFN TO-3 8-PowerTDFN 8-PowerTDFN
Packing Method Bulk; Bulk Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
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