DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs DMTH8008LFGQ-13

Win Source Part Number: 1353497-DMTH8008LFGQ-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

MOSFET BVDSS: 61V~100V POWERDI33

MOSFET BVDSS: 61V~100V POWERDI33

MOSFET BVDSS: 61V~100V POWERDI33

MOSFET BVDSS: 61V~100V POWERDI33

MOSFET BVDSS: 61V~100V POWERDI33 Product overview: DMTH8008LFGQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH8008LFGQ-13 can be used for catalog matching and distributor lookup.