DIODES Incorporated FET, MOSFET Arrays DMTH6016LSDQ-13

Mosfet Array 2 N-Channel (Dual) 60V 7.6A (Ta) 1.4W, 1.9W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 60V 7.6A (Ta) 1.4W, 1.9W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 60V 7.6A (Ta) 1.4W, 1.9W Surface Mount 8-SO

MOSFET 2N-CH 60V 7.6A 8SO Product overview: DMTH6016LSDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH6016LSDQ-13 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278581-DMTH6016LSDQ-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.4W, 1.9W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: DMTH6016LSDQ-13DICT,DMTH6016LSDQ-13DITR,DMTH6016LSDQ-13DIDKR
Base Product Number: DMTH6016