MOSFET 2N-CH 7.6A 8SO Product overview: DMTH6016LSD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH6016LSD-13 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 7.6A 8SOIC
Mosfet Array 2 N-Channel (Dual) 7.6A (Ta) Surface Mount 8-SO
MOSFET 2N-CH 7.6A 8SOIC
MOSFET 2 N-CHANNEL 7.6A 8SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 869203-DMTH6016LSD-1
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 7.6A (Ta) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMTH6016
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
Estimated Pruduction Lead Time: 49 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET, N-CH, 60V, 7.6A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
60V 7.6A 1.9W 19.5mΩ@10V,10A 2.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS
MOSFET 2N-CH 7.6A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-DMTH6016LSD-13 | 31-DMTH6016LSD-13CT-ND | DMTH6016LSD-13 | 869203-DMTH6016LSD-13 | 15AC8197 | DMTH6016LSD-13 | DMTH6016LSD-13 | DMTH6016LSD-13 |
| Product Name | 7.6A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6016LSD-13 | Mosfet, N-Ch, 60V, 7.6A, Soic-8; Transistor Polarity Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 1.9 milliwatts | 1900 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
