Manufacturer: Diodes Incorporated
Win Source Part Number: 1033888-DMTH6009LK3Q
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14.2A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 33.5nC @ 10V
Max Input Capacitance: 1925pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3
MOSFET N-CH 60V 14.2A/59A TO252
MOSFET, N-CH, 60V, 59A, TO-252 ROHS COMPLIANT: YES
MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033888-DMTH6009LK3Q-13 | DMTH6009LK3Q-13DIDKR-ND | DMTH6009LK3Q-13 | 32AK9143 | DMTH6009LK3Q-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | ||||
| PD | 3200 to 60000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
