DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13 DMTH6009LK3Q-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033888-DMTH6009LK3Q -13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14.2A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 33.5nC @ 10V Max Input Capacitance: 1925pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033888-DMTH6009LK3Q -13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14.2A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 33.5nC @ 10V Max Input Capacitance: 1925pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13 - 1033888-DMTH6009LK3Q-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13
1033888-DMTH6009LK3Q-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13 1033888-DMTH6009LK3Q-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033888-DMTH6009LK3Q -13 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 14.2A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 33.5nC @ 10V Max Input Capacitance: 1925pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033888-DMTH6009LK3Q-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 14.2A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 33.5nC @ 10V
Max Input Capacitance: 1925pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DMTH6009LK3Q-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMTH6009LK3Q-13DIDKR-ND
Single FETs, MOSFETs DMTH6009LK3Q-13DIDKR-ND
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

Buy Now Datasheet
Single FETs, MOSFETs - DMTH6009LK3Q-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMTH6009LK3Q-13DICT-ND
Single FETs, MOSFETs DMTH6009LK3Q-13DICT-ND
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

Buy Now Datasheet
Single FETs, MOSFETs - DMTH6009LK3Q-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMTH6009LK3Q-13DITR-ND
Single FETs, MOSFETs DMTH6009LK3Q-13DITR-ND
N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

Buy Now Datasheet
Singapore
60V 14.2A 59A TO252 MOSFET Transistor
278-DMTH6009LK3Q-13
60V 14.2A 59A TO252 MOSFET Transistor 278-DMTH6009LK3Q-13
MOSFET N-CH 60V 14.2A/59A TO252 Product overview: DMTH6009LK3Q-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 14.2A, 59A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 14.2A, 59A, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH6009LK3Q-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 14.2A/59A TO252 Product overview: DMTH6009LK3Q-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 14.2A, 59A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 14.2A, 59A, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH6009LK3Q-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W

MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMTH6009LK3Q-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMTH6009LK3Q-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMTH6009LK3Q-13
MOSFET N-CH 60V 14.2A/59A TO252

MOSFET N-CH 60V 14.2A/59A TO252

Supplier's Site
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant Diodes Inc. - 32AK9143 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant Diodes Inc.
32AK9143
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant Diodes Inc. 32AK9143
MOSFET, N-CH, 60V, 59A, TO-252 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 59A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033888-DMTH6009LK3Q-13 DMTH6009LK3Q-13DIDKR-ND 278-DMTH6009LK3Q-13 DMTH6009LK3Q-13 DMTH6009LK3Q-13 32AK9143
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMTH6009LK3Q-13 Single FETs, MOSFETs 60V 14.2A 59A TO252 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 3200 to 60000 milliwatts 60 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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