DIODES Incorporated Single FETs, MOSFETs DMTH6006SK3-13

The DMTH6006SK3 is a 60V N-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring a low on-state resistance of 6.9mΩ at VGS = 10V and a continuous drain current of 81A at TC = +25°C. It is packaged in a TO252 (DPAK) case with approximate dimensions of 6.10mm x 6.58mm and weighs 0.33 grams. The device supports a maximum junction temperature of 175°C, has a thermal resistance from junction to case of 1.76°C/W, and is rated for 73mJ avalanche energy. It complies with RoHS, is halogen and antimony free, and is qualified to AEC-Q200 for automotive applications.