MOSFET N-CH 60V 100A TO252 Product overview: DMTH6004SK3-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH6004SK3-13 can be used for catalog matching and distributor lookup.
N-Channel 60V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-3
N-Channel 60V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-3
N-Channel 60V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-3
MOSFET N-CH 60V 100A TO252
Manufacturer: Diodes Incorporated
Win Source Part Number: 1324730-DMTH6004SK3-
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W, 180W (Tc)
Supplier Device Package: TO-252-3
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 69
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMTH6004SK3-13DICT,D
Base Product Number: DMTH6004
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 60V 100A TO252
MOSFET, N-CH, 60V, 100A, TO-252 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMTH6004SK3-13 | DMTH6004SK3-13DIDKR-ND | DMTH6004SK3-13 | 1324730-DMTH6004SK3-13 | DMTH6004SK3-13 | DMTH6004SK3-13 | 32AK9138 |
| Product Name | 60V 100A TO252 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 100A, To-252 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 180 milliwatts | 3900 milliwatts | 3900 to 180000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
