DIODES Incorporated FET, MOSFET Arrays DMTH4007SPDQ-13

Mosfet Array 2 N-Channel (Dual) 40V 14.2A 2.6W Surface Mount PowerDI5060-8

Mosfet Array 2 N-Channel (Dual) 40V 14.2A 2.6W Surface Mount PowerDI5060-8

Mosfet Array 2 N-Channel (Dual) 40V 14.2A 2.6W Surface Mount PowerDI5060-8

MOSFET 2N-CH 40V 14.2A POWERDI50 Product overview: DMTH4007SPDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 14.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 14.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH4007SPDQ-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1324661-DMTH4007SPDQ-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 2.6W
Supplier Device Package: PowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMTH4007SPDQ-13DICT,DMTH4007SPDQ-13DIDKR,DMTH4007SPDQ-13DITR
Base Product Number: DMTH4007
RoHS Status: ROHS3 Compliant