DIODES Incorporated Single FETs, MOSFETs DMTH12H007LPSWQ-13

The DMTH12H007LPSWQ-13 is a 120V N-channel enhancement mode MOSFET in a PowerDI5060-8 package with a 1.10mm maximum profile, designed for high-efficiency switching and DC-DC conversion applications. It features a maximum on-state resistance of 7.8mΩ at 10V gate-source voltage and 14.1mΩ at 4.5V, with continuous drain current ratings of 99A at TC=25°C and 90A at TA=25°C. The device is AEC-Q101 qualified, RoHS compliant, and rated for operation from -55°C to +175°C junction temperature. Its thermal resistance from junction to case is 1.3°C/W, and it supports 365mJ unclamped inductive switching energy. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.