DIODES Incorporated FET, MOSFET Arrays DMTH10H038SPDW-13

Description
MOSFET 2N-CH 100V 25A PWRDI50
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Description
MOSFET 2N-CH 100V 25A PWRDI50
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Datasheet
Datasheet Summary
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The DMTH10H038SPDW is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, rated for 100V drain-source voltage and 175°C junction temperature. It has a maximum on-resistance of 33mΩ at VGS = 10V and a continuous drain current of 25A at TC = 25°C. The device supports 100% unclamped inductive switching testing, features low input capacitance, and has a thermal resistance of 3.8°C/W from junction to case. It is RoHS compliant, halogen and antimony free, and meets UL 94V-0 flammability standards. Moisture sensitivity is rated at Level 1 per J-STD-020.

Datasheet Summary
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The DMTH10H038SPDW is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, rated for 100V drain-source voltage and 175°C junction temperature. It has a maximum on-resistance of 33mΩ at VGS = 10V and a continuous drain current of 25A at TC = 25°C. The device supports 100% unclamped inductive switching testing, features low input capacitance, and has a thermal resistance of 3.8°C/W from junction to case. It is RoHS compliant, halogen and antimony free, and meets UL 94V-0 flammability standards. Moisture sensitivity is rated at Level 1 per J-STD-020.

Suppliers

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Supplier Links
FET, MOSFET Arrays - 31-DMTH10H038SPDW-13-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMTH10H038SPDW-13-ND
FET, MOSFET Arrays 31-DMTH10H038SPDW-13-ND
MOSFET 2N-CH 100V 25A PWRDI50

MOSFET 2N-CH 100V 25A PWRDI50

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMTH10H038SPDW-13-ND
Product Name FET, MOSFET Arrays
Package Type 8-PowerTDFN
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