DIODES Incorporated FET, MOSFET Arrays DMTH10H025LPDW-13

The DMTH10H025LPDW is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, rated for 100V drain-source voltage and +175°C junction temperature. It features a low on-resistance of 23mΩ at VGS=10V and 42A continuous drain current, with 100% unclamped inductive switching tested for application robustness. The device includes wettable flanks for improved optical inspection and is RoHS compliant with a UL 94 V-0 rated mold compound. Thermal resistance from junction to case is 1.6°C/W, and junction-to-ambient is 44°C/W on a standard PCB. The part is qualified to AEC-Q101 and designed for automotive applications such as DC-DC converters and motor control. The ordering code -13 denotes tape and reel packaging, consistent with the series.