DIODES Incorporated Single FETs, MOSFETs DMTH10H025LK3Q-13

MOSFET N-CH 100V 51.7A TO252 T&R

MOSFET N-CH 100V 51.7A TO252 T&R

N-Channel 100V 51.7A (Tc) 3.1W (Ta) Surface Mount TO-252, (D-Pak)

MOSFET N-CH 100V 51.7A TO252 T&R Product overview: DMTH10H025LK3Q-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 51.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 51.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH10H025LK3Q-13 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1353243-DMTH10H025LK3Q-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Base Product Number: DMTH10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Power Dissipation (Max): 3.1W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Affected
ECCN: EAR99

MOSFET N-CH 100V 51.7A TO252 T&R