DIODES Incorporated 100V 13A MOSFET Transistor DMTH10H017LPDQ-13

MOSFET 2N-CH 100V 13A PWRDI50 Product overview: DMTH10H017LPDQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH10H017LPDQ-13 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 100V 13A PWRDI50

MOSFET 2N-CH 100V 13A PWRDI50

MOSFET 2N-CH 100V 13A PWRDI50

Win Source Part Number: 1278579-DMTH10H017LPDQ-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 1.5W (Ta), 93W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type E)
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-DMTH10H017LPDQ-13TR
Base Product Number: DMTH10H017

MOSFET BVDSS: 61V~100V POWERDI50