DIODES Incorporated FET, MOSFET Arrays DMTH10H013LPDW-13

DMTH10H013LPDW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, rated for 100V drain-source voltage and maximum junction temperature of +175°C. It features a maximum on-resistance of 12mΩ at VGS=10V and 19mΩ at VGS=4.5V, with continuous drain current ratings of 52A and 43A respectively. The device supports 100% unclamped inductive switching, has low input capacitance, and fast switching speed. It is RoHS compliant, lead-free, and meets UL 94 V-0 flammability rating. Thermal resistance is 2.2°C/W junction-to-case and 54°C/W junction-to-ambient. The part is qualified for automotive applications per AEC-Q200 and manufactured in IATF 16949 certified facilities.