MOSFET N-CH 100V PWRDI5060 Product overview: DMTH10H010SPSQ-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMTH10H010SPSQ-1
N-Channel 100V 11.8A (Ta), 100A (Tc) 1.5W (Ta), 166W (Tc) Surface Mount PowerDI5060-8
N-Channel 100V 11.8A (Ta), 100A (Tc) 1.5W (Ta), 166W (Tc) Surface Mount PowerDI5060-8
N-Channel 100V 11.8A (Ta), 100A (Tc) 1.5W (Ta), 166W (Tc) Surface Mount PowerDI5060-8
MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
MOSFET N-CH 100V PWRDI5060
MOSFET, N-CH, 100V, 100A, POWERDI 5060 ROHS COMPLIANT: YES
MOSFET N-CH 100V PWRDI5060
| ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMTH10H010SPSQ-13 | 31-DMTH10H010SPSQ-13DKR-ND | DMTH10H010SPSQ-13 | DMTH10H010SPSQ-13 | 28AK8816 | DMTH10H010SPSQ-13 |
| Product Name | 100V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 100A, Powerdi 5060 Rohs Compliant Diodes Inc. | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 166 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
