DIODES Incorporated Single FETs, MOSFETs DMT8030LFDF-7

MOSFET BVDSS: 61V~100V U-DFN2020

MOSFET BVDSS: 61V~100V U-DFN2020 Product overview: DMT8030LFDF-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT8030LFDF-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1336998-DMT8030LFDF-7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Power Dissipation (Max): 1.2W (Ta)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V