DIODES Incorporated FET, MOSFET Arrays DMT8020LDGQ-13

The DMT8020LDGQ-13 is a symmetric dual N-channel MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications. It has a drain-source voltage rating of 80V, with on-resistance of 20mΩ at 10V gate-source voltage and 30mΩ at 4.5V gate-source voltage. The device supports continuous drain currents of 6.7A and 5.8A under respective gate biases, and is rated for 100% unclamped inductive switching. It is AEC-Q101 qualified, RoHS compliant, and manufactured in IATF 16949 certified facilities. The package is molded plastic with UL 94 V-0 flammability rating, and moisture sensitivity level 1 per J-STD-020. The part is supplied in tape and reel packaging with 3000 units per reel.