Manufacturer: Diodes Incorporated
Win Source Part Number: 801330-DMT8012LSS-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 16.5mOhm at 12A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1949pF at 40V
Current - Continuous Drain (Id) at 25°C: 9.7A
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
MOSFET N-CH 80V 9.7A 8SO Product overview: DMT8012LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT8012LSS-13 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 9.7A 8SO
MOSFET N-CH 80V 9.7A 8SO
MOSFET, N-CH, 80V, 9.7A, SOIC ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 801330-DMT8012LSS-13 | 31-DMT8012LSS-13TR-ND | 278-DMT8012LSS-13 | DMT8012LSS-13 | DMT8012LSS-13 | 28AK8899 | DMT8012LSS-13 |
| Product Name | FETs - Single - DMT8012LSS-13 | Single FETs, MOSFETs | 80V 9.7A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 9.7A, Soic Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| PD | 1500 milliwatts | 2 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | 1949 pF @ 40 V | TO-3 |
