DIODES Incorporated Single FETs, MOSFETs DMT8012LSS-13

N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO

MOSFET N-CH 80V 9.7A 8SO Product overview: DMT8012LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT8012LSS-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 80V 9.7A 8SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 801330-DMT8012LSS-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 16.5mOhm at 12A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1949pF at 40V
Current - Continuous Drain (Id) at 25°C: 9.7A
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V