Manufacturer: Diodes Incorporated
Win Source Part Number: 1323905-DMT8012LFG-7
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.2W, 30W (Tc)
Supplier Device Package: PowerDI3333-8
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-PowerVDFN
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMT8012LFG-7DICT,DMT
Base Product Number: DMT8012
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 80V PWRDI3333
MOSFET N-CH 80V PWRDI3333 Product overview: DMT8012LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT8012LFG-7 can be used for catalog matching and distributor lookup.
N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8
N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8
N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8
MOSFET, N-CH, 80V, 35A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
MOSFET N-CH 80V PWRDI3333
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1323905-DMT8012LFG-7 | DMT8012LFG-7 | 278-DMT8012LFG-7 | DMT8012LFG-7DIDKR-ND | 28AK8898 | DMT8012LFG-7 | DMT8012LFG-7 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 80V MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 35A, Powerdi 3333 Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 2200 to 30000 milliwatts | 2200 milliwatts | 2.2 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-PowerVDFN | 8-PowerVDFN | Tape & Reel (TR) | 8-PowerVDFN | TO-3 | 8-PowerVDFN | |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
