DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs DMT8008LSS-13

Description
Win Source Part Number: 1350935-DMT8008LSS-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Power Dissipation (Max): 1.3W (Ta) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMT8008 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) , 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
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Description
Win Source Part Number: 1350935-DMT8008LSS-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Power Dissipation (Max): 1.3W (Ta) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMT8008 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) , 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
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Suppliers

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1350935-DMT8008LSS-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1350935-DMT8008LSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1350935-DMT8008LSS-13
Win Source Part Number: 1350935-DMT8008LSS-1 3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Power Dissipation (Max): 1.3W (Ta) Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Diodes Incorporated Base Product Number: DMT8008 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) , 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V

Win Source Part Number: 1350935-DMT8008LSS-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMT8008
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) , 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V

Buy Now Datasheet
Single FETs, MOSFETs - DMT8008LSS-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMT8008LSS-13
Single FETs, MOSFETs DMT8008LSS-13
MOSFET BVDSS: 61V-100V SO-8

MOSFET BVDSS: 61V-100V SO-8

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMT8008LSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMT8008LSS-13
MOSFET BVDSS: 61V-100V SO-8

MOSFET BVDSS: 61V-100V SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 61V-100V

MOSFET MOSFET BVDSS: 61V-100V

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1350935-DMT8008LSS-13 DMT8008LSS-13 DMT8008LSS-13 DMT8008LSS-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3
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