DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs DMT8008LSS-13

Win Source Part Number: 1350935-DMT8008LSS-13
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMT8008
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) , 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V

MOSFET BVDSS: 61V-100V SO-8

MOSFET BVDSS: 61V-100V SO-8 Product overview: DMT8008LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 61V, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61V, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT8008LSS-13 can be used for catalog matching and distributor lookup.