DIODES Incorporated Single FETs, MOSFETs DMT69M8LPS-13

N-Channel 60V 10.2A (Ta), 70A (Tc) 2.3W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

MOSFET N-CHA 60V 10.2A POWERDI Product overview: DMT69M8LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT69M8LPS-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1323906-DMT69M8LPS-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 10.2A, 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.3W, 113W (Tc)
Supplier Device Package: PowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMT69M8LPS-13DICT,DMT69M8LPS-13DITR,DMT69M8LPS-13DIDKR
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant