DIODES Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single DMT69M8LPS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1323906-DMT69M8LPS-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.2A, 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.3W, 113W (Tc) Supplier Device Package: PowerDI5060-8 Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 8-PowerTDFN ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMT69M8LPS-13DICT,DM T69M8LPS-13DITR,DMT6 9M8LPS-13DIDKR Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1323906-DMT69M8LPS-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.2A, 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.3W, 113W (Tc) Supplier Device Package: PowerDI5060-8 Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 8-PowerTDFN ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMT69M8LPS-13DICT,DM T69M8LPS-13DITR,DMT6 9M8LPS-13DIDKR Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323906-DMT69M8LPS-13 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323906-DMT69M8LPS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323906-DMT69M8LPS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1323906-DMT69M8LPS-1 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10.2A, 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.3W, 113W (Tc) Supplier Device Package: PowerDI5060-8 Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 8-PowerTDFN ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Other Part Number: DMT69M8LPS-13DICT,DM T69M8LPS-13DITR,DMT6 9M8LPS-13DIDKR Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: Diodes Incorporated
Win Source Part Number: 1323906-DMT69M8LPS-13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 10.2A, 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.3W, 113W (Tc)
Supplier Device Package: PowerDI5060-8
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: DMT69M8LPS-13DICT,DMT69M8LPS-13DITR,DMT69M8LPS-13DIDKR
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
60V 10.2A MOSFET Transistor
278-DMT69M8LPS-13
60V 10.2A MOSFET Transistor 278-DMT69M8LPS-13
MOSFET N-CHA 60V 10.2A POWERDI Product overview: DMT69M8LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT69M8LPS-13 can be used for catalog matching and distributor lookup.

MOSFET N-CHA 60V 10.2A POWERDI Product overview: DMT69M8LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT69M8LPS-13 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMT69M8LPS-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT69M8LPS-13DITR-ND
Single FETs, MOSFETs DMT69M8LPS-13DITR-ND
N-Channel 60V 10.2A (Ta), 70A (Tc) 2.3W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

N-Channel 60V 10.2A (Ta), 70A (Tc) 2.3W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMT69M8LPS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMT69M8LPS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMT69M8LPS-13
MOSFET N-CHA 60V 10.2A POWERDI

MOSFET N-CHA 60V 10.2A POWERDI

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1323906-DMT69M8LPS-13 278-DMT69M8LPS-13 DMT69M8LPS-13DITR-ND DMT69M8LPS-13
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V 10.2A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 2300 to 113000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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