MOSFET N-CHANNEL 60V 28.9A 8SO
MOSFET N-CHANNEL 60V 28.9A 8SO
MOSFET N-CHANNEL 60V 28.9A 8SO
N-Channel 60V 28.9A (Tc) 1.9W (Ta) Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 1324138-DMT68M8LSS-1
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 28.9A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 31.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-SOIC (0.154", 3.90mm Width)
ECCN: EAR99
Fake Threat In the Open Market: 74
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: DMT68
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CHANNEL 60V 28.9A 8SO Product overview: DMT68M8LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 28.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 28.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT68M8LSS-13 can be used for catalog matching and distributor lookup.
MOSFET N-CHANNEL 60V 28.9A 8SO
MOSFET, N-CH, 60V, 28.9A, SOIC ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMT68M8LSS-13 | 31-DMT68M8LSS-13CT-ND | 1324138-DMT68M8LSS-13 | 278-DMT68M8LSS-13 | DMT68M8LSS-13 | DMT68M8LSS-13 | 28AK8897 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 60V 28.9A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 28.9A, Soic Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 28900 milliamps | ||||||
| PD | 1900 milliwatts | 1900 milliwatts | 1.9 milliwatts |