Manufacturer: Diodes Incorporated
Win Source Part Number: 802163-DMT6018LDR-7
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W
Supplier Device Package: V-DFN3030-8
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17mOhm at 8.2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 13.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 869pF at 30V
Current - Continuous Drain (Id) at 25°C: 8.8A
Vgs(th) (Maximum) at Id: 3V at 250μA
MOSFET 2N-CH 60V 8.8A 8VDFN Product overview: DMT6018LDR-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMT6018LDR-7 can be used for catalog matching and distributor lookup.
MOSFET BVDSS: 41V 60V V-DFN3030-
MOSFET 2N-CH 60V 8.8A 8VDFN
DUAL MOSFET, N-CH, 60V, 8.8A, VDFN3030 ROHS COMPLIANT: YES
MOSFET BVDSS: 41V 60V V-DFN3030
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 802163-DMT6018LDR-7 | 289-DMT6018LDR-7 | DMT6018LDR-7 | DMT6018LDR-7 | 81AH8915 | 233-DMT6018LDR-7 |
| Product Name | FETs - Arrays - DMT6018LDR-7 | 60V 8.8A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, N-Ch, 60V, 8.8A, Vdfn3030 Rohs Compliant Diodes Inc. | MOSFET BVDSS: 41V 60V V-DFN3030 |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | 8-PowerVDFN | 8-PowerVDFN | TO-3 | |
| Packing Method | Tape Reel; Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) |
