DIODES Incorporated 60V 9.2A MOSFET Transistor DMT6017LSS-13

MOSFET N-CH 60V 9.2A 8SO Product overview: DMT6017LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6017LSS-13 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 9.2A 8SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 806370-DMT6017LSS-13
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 1.5W
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 18mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 864pF at 30V
Current - Continuous Drain (Id) at 25°C: 9.2A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V