DIODES Incorporated FET, MOSFET Arrays DMT6017LDV-13

The DMT6017LDV-13 is a 65V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a maximum on-state resistance (RDS(ON)) of 22m,Ѷ at a gate-source voltage (VGS) of 10V and 29m,Ѷ at 4.5V, with a continuous drain current rating of 25.3A at 25¬8C. The device is suitable for applications such as wireless charging and DC-DC converters. This MOSFET is ESD protected and complies with RoHS standards, making it a suitable choice for environmentally conscious designs. The package type is PowerDI3333-8, which is optimized for surface mount applications. The device operates within a temperature range of -55¬8C to +150¬8C and has a moisture sensitivity level of 1. Engineers considering this component should note its low input capacitance and fast switching speed, which contribute to its performance in power management scenarios. The DMT6017LDV-13 is available in a reel packaging of 3,000 units, making it convenient for bulk purchasing.