The DMT6017LDV-13 is a 65V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It features a maximum on-state resistance (RDS(ON)) of 22m,Ѷ at a gate-source voltage (VGS) of 10V and 29m,Ѷ at 4.5V, with a continuous drain current rating of 25.3A at 25¬8C. The device is suitable for applications such as wireless charging and DC-DC converters. This MOSFET is ESD protected and complies with RoHS standards, making it a suitable choice for environmentally conscious designs. The package type is PowerDI3333-8, which is optimized for surface mount applications. The device operates within a temperature range of -55¬8C to +150¬8C and has a moisture sensitivity level of 1. Engineers considering this component should note its low input capacitance and fast switching speed, which contribute to its performance in power management scenarios. The DMT6017LDV-13 is available in a reel packaging of 3,000 units, making it convenient for bulk purchasing.
Manufacturer: Diodes Incorporated
Win Source Part Number: 869160-DMT6017LDV-13
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 25.3A (Tc) Surface Mount PowerDI3333-8 (Type UXC)
Package: 8-PowerVDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMT6017
Categories: Discrete Semiconductor Products
Case / Package: PowerDI3333-8 (Type UXC)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mosfet Array 2 N-Channel (Dual) 25.3A (Tc) Surface Mount PowerDI3333-8 (Type UXC)
MOSFET 2N-CH 25.3A POWERDI3333 Product overview: DMT6017LDV-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMT6017LDV-13 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 25.3A POWERDI3333
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 869160-DMT6017LDV-13 | DMT6017LDV-13DI-ND | 289-DMT6017LDV-13 | DMT6017LDV-13 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6017LDV-13 | FET, MOSFET Arrays | 25.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; PowerDI3333-8 (Type UXC) | 8-PowerVDFN | Tape & Reel (TR) | |
| MOSFET Operating Mode | Enhancement |
