MOSFET N-CH 60V 9.2A 8SO Product overview: DMT6016LSS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6016LSS-13 can be used for catalog matching and distributor lookup.
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033884-DMT6016LSS-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.2A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 864pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 9.2A 8SO
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
MOSFET, N-CH, 9.2A, 60V, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
60V 9.2A 1.5W 18mΩ@10V,10A 2.5V@250uA N Channel SOIC-8 MOSFETs ROHS
MOSFET N-CH 60V 9.2A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMT6016LSS-13 | DMT6016LSS-13DITR-ND | 1033884-DMT6016LSS-13 | DMT6016LSS-13 | DMT6016LSS-13 | 39AH6617 | DMT6016LSS-13 | DMT6016LSS-13 |
| Product Name | 60V 9.2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 9.2A, 60V, Soic-8; Channel Type Diodes Inc. | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| PD | 2.1 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
