DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13 DMT6016LSS-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033884-DMT6016LSS-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 864pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033884-DMT6016LSS-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 864pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13 - 1033884-DMT6016LSS-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13
1033884-DMT6016LSS-13
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13 1033884-DMT6016LSS-13
Manufacturer: Diodes Incorporated Win Source Part Number: 1033884-DMT6016LSS-1 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 864pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033884-DMT6016LSS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.2A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 864pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DMT6016LSS-13DICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6016LSS-13DICT-ND
Single FETs, MOSFETs DMT6016LSS-13DICT-ND
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMT6016LSS-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6016LSS-13DITR-ND
Single FETs, MOSFETs DMT6016LSS-13DITR-ND
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMT6016LSS-13DIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6016LSS-13DIDKR-ND
Single FETs, MOSFETs DMT6016LSS-13DIDKR-ND
N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - DMT6016LSS-13 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMT6016LSS-13
Single FETs, MOSFETs DMT6016LSS-13
MOSFET N-CH 60V 9.2A 8SO

MOSFET N-CH 60V 9.2A 8SO

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

Buy Now Datasheet
Mosfet, N-Ch, 9.2A, 60V, Soic-8; Channel Type Diodes Inc. - 39AH6617 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 9.2A, 60V, Soic-8; Channel Type Diodes Inc.
39AH6617
Mosfet, N-Ch, 9.2A, 60V, Soic-8; Channel Type Diodes Inc. 39AH6617
MOSFET, N-CH, 9.2A, 60V, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N-CH, 9.2A, 60V, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
DMT6016LSS-13
Triode/MOS Tube/Transistor >> MOSFETs DMT6016LSS-13
60V 9.2A 1.5W 18mΩ@10V,10A 2.5V@250uA N Channel SOIC-8 MOSFETs ROHS

60V 9.2A 1.5W 18mΩ@10V,10A 2.5V@250uA N Channel SOIC-8 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMT6016LSS-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMT6016LSS-13
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMT6016LSS-13
MOSFET N-CH 60V 9.2A 8SO

MOSFET N-CH 60V 9.2A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1033884-DMT6016LSS-13 DMT6016LSS-13DICT-ND DMT6016LSS-13 DMT6016LSS-13 39AH6617 DMT6016LSS-13 DMT6016LSS-13
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LSS-13 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 9.2A, 60V, Soic-8; Channel Type Diodes Inc. Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3 8-SOIC (0.154, 3.90mm Width)
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