MOSFET N-CH 60V 10.6A PWRDI5060 Product overview: DMT6016LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6016LPS-13 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 10.6A PWRDI5060
Manufacturer: Diodes Incorporated
Win Source Part Number: 869158-DMT6016LPS-13
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 10.6A (Ta) 1.23W (Ta) Surface Mount PowerDI5060-8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: DMT6016
Categories: Discrete Semiconductor Products
Case / Package: PowerDI5060-8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMT6016LPS-13DITR, DMT6016LPS-13DIDKR, DMT6016LPS-13DICT
N-Channel 60V 10.6A (Ta) 1.23W (Ta) Surface Mount PowerDI5060-8
N-Channel 60V 10.6A (Ta) 1.23W (Ta) Surface Mount PowerDI5060-8
N-Channel 60V 10.6A (Ta) 1.23W (Ta) Surface Mount PowerDI5060-8
MOSFET, N-CH, 32A, 60V, POWERDI5060; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:32A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
MOSFET N-CH 60V 10.6A PWRDI5060
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMT6016LPS-13 | DMT6016LPS-13 | 869158-DMT6016LPS-13 | 31-DMT6016LPS-13DKR-ND | 39AH6616 | DMT6016LPS-13 | DMT6016LPS-13 |
| Product Name | 60V 10.6A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6016LPS-13 | Single FETs, MOSFETs | Mosfet, N-Ch, 32A, 60V, Powerdi5060; Channel Type Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 2.7 milliwatts | 1230 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
