DIODES Incorporated Single FETs, MOSFETs DMT6015LFV-7

N-Channel 60V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8 (Type UX)

MOSFET N-CH 60V PWRDI3333

MOSFET N-CH 60V PWRDI3333

MOSFET N-CH 60V PWRDI3333

MOSFET N-CH 60V PWRDI3333 Product overview: DMT6015LFV-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6015LFV-7 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278399-DMT6015LFV-7
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UX)
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Base Product Number: DMT6015
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V