N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8
N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8
N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 1080937-DMT6010LPS-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.5A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 41.3nC @ 10V
Max Input Capacitance: 2090pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SI7164DP-T1-GE3; TSM070N07PQ56 RLG; DMTH6010LPSQ-13;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 13.5A PWRDI5060
MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 80A
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DMT6010LPS-13DIDKR-ND | 1080937-DMT6010LPS-13 | DMT6010LPS-13 | DMT6010LPS-13 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6010LPS-13 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | 8-PowerTDFN | SOT3; PowerDI5060-8 | 8-PowerTDFN | |
| V(BR)DSS | 60 volts |
