DIODES Incorporated 60V 13.5A MOSFET Transistor DMT6010LPS-13

MOSFET N-CH 60V 13.5A PWRDI5060 Product overview: DMT6010LPS-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 13.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6010LPS-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 1080937-DMT6010LPS-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI5060-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13.5A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 41.3nC @ 10V
Max Input Capacitance: 2090pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SI7164DP-T1-GE3; TSM070N07PQ56 RLG; DMTH6010LPSQ-13;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8

N-Channel 60V 13.5A (Ta), 80A (Tc) 2.2W (Ta), 113W (Tc) Surface Mount PowerDI5060-8