MOSFET N-CH 60V 13A PWRDI3333 Product overview: DMT6010LFG-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6010LFG-13 can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033883-DMT6010LFG-1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Family Name: DMT6010LFG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerDI3333-8
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13A (Ta), 30A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 41.3nC @ 10V
Max Input Capacitance: 2090pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): NVTFS5C673NLWFTAG; NTTFS5C673NLTAG; NVTFS5C673NLTAG; BSZ100N06LS3 G;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
N-Channel 60V 13A (Ta), 30A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
MOSFET N-CH 60V 13A PWRDI3333
MOSFET N-CH 60V 13A PWRDI3333
MOSFET 60V P-Ch Enh Mode 22Vgss 2090pF 41.3nC
MOSFET N-CH 60V 13A PWRDI3333
MOSFET N-CH 60V 13A PWRDI3333
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-DMT6010LFG-13 | 1033883-DMT6010LFG-13 | 31-DMT6010LFG-13TR-ND | DMT6010LFG-13 | DMT6010LFG-13 | DMT6010LFG-13 |
| Product Name | 60V 13A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMT6010LFG-13 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| PD | 2.2 milliwatts | 2200 to 41000 milliwatts | 2200 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
