Manufacturer: Diodes Incorporated
Win Source Part Number: 804612-DMT6009LCT
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 2.2W , 25W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 12mOhm at 13.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 33.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1925pF at 30V
Current - Continuous Drain (Id) at 25°C: 37.2A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±16V
N-Channel 60V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 37.2A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 804612-DMT6009LCT | DMT6009LCTDI-5-ND | DMT6009LCT | DMT6009LCT |
| Product Name | FETs - Single - DMT6009LCT | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| PD | 2200 to 25000 milliwatts |
