DIODES Incorporated FETs - Single - DMT6009LCT DMT6009LCT

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804612-DMT6009LCT Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2.2W , 25W (Tc) Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 12mOhm at 13.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 33.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1925pF at 30V Current - Continuous Drain (Id) at 25°C: 37.2A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±16V
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 804612-DMT6009LCT Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2.2W , 25W (Tc) Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 12mOhm at 13.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 33.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1925pF at 30V Current - Continuous Drain (Id) at 25°C: 37.2A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±16V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - DMT6009LCT - 804612-DMT6009LCT - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - DMT6009LCT
804612-DMT6009LCT
FETs - Single - DMT6009LCT 804612-DMT6009LCT
Manufacturer: Diodes Incorporated Win Source Part Number: 804612-DMT6009LCT Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2.2W , 25W (Tc) Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 12mOhm at 13.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 33.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1925pF at 30V Current - Continuous Drain (Id) at 25°C: 37.2A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±16V

Manufacturer: Diodes Incorporated
Win Source Part Number: 804612-DMT6009LCT
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 2.2W , 25W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 12mOhm at 13.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 33.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1925pF at 30V
Current - Continuous Drain (Id) at 25°C: 37.2A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±16V

Buy Now
Singapore
60V 37.2A MOSFET Transistor
278-DMT6009LCT
60V 37.2A MOSFET Transistor 278-DMT6009LCT
MOSFET N-CH 60V 37.2A TO220AB Product overview: DMT6009LCT from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 37.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 37.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6009LCT can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 37.2A TO220AB Product overview: DMT6009LCT from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 37.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 37.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6009LCT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - DMT6009LCTDI-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMT6009LCTDI-5-ND
Single FETs, MOSFETs DMT6009LCTDI-5-ND
N-Channel 60V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220-3

N-Channel 60V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMT6009LCT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMT6009LCT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMT6009LCT
MOSFET N-CH 60V 37.2A TO220AB

MOSFET N-CH 60V 37.2A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET BVDSS: 41V-60V

MOSFET MOSFET BVDSS: 41V-60V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 804612-DMT6009LCT 278-DMT6009LCT DMT6009LCTDI-5-ND DMT6009LCT DMT6009LCT
Product Name FETs - Single - DMT6009LCT 60V 37.2A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
PD 2200 to 25000 milliwatts 25 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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