MOSFET N-CH 60V 13A PWRDI3333 Product overview: DMT6008LFG-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DMT6008LFG-7 can be used for catalog matching and distributor lookup.
N-Channel 60V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
N-Channel 60V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
N-Channel 60V 13A (Ta), 60A (Tc) 2.2W (Ta), 41W (Tc) Surface Mount PowerDI3333-8
Manufacturer: Diodes Incorporated
Win Source Part Number: 1324695-DMT6008LFG-7
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 13A, 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.2W, 41W (Tc)
Supplier Device Package: PowerDI3333-8
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 8-PowerVDFN
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DMT6008LFG-7DIDKR,DM
Base Product Number: DMT6008
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET, N-CH, 60V, 60A, POWERDI 3333 ROHS COMPLIANT: YES
MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
MOSFET N-CH 60V 13A PWRDI3333
60V 7.5mΩ@10V,20A 2V@250uA N Channel PowerDI3333-8 MOSFETs ROHS
MOSFET N-CH 60V 13A PWRDI3333
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-DMT6008LFG-7 | DMT6008LFG-7DICT-ND | 1324695-DMT6008LFG-7 | 28AK8880 | DMT6008LFG-7 | DMT6008LFG-7 | DMT6008LFG-7 | DMT6008LFG-7 |
| Product Name | 60V 13A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 60V, 60A, Powerdi 3333 Rohs Compliant Diodes Inc. | MOSFET | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 2.2 milliwatts | 2200 to 41000 milliwatts | 2200 milliwatts | 2200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
